- Research area
- Synthesis of graphene, hexagonal boron nitride and metal dichalcogenides
The two dimensional (2D) layered materials are of significant interest, with their exciting electrical, optical and mechanical properties, for developing novel electronic devices. We are exploring the growth of various high quality layered materials by atmospheric and low-pressure chemical vapor deposition (CVD) process developed in our lab. Growth and anisotropic etching mechanism on a catalyst surface are studied to understand the controllable growth of graphene and hexagonal boron nitride (hBN) layers. Synthesis of transition metal dichalcogenides (TMDCs) layer (MoS2, WS2 et.) by the CVD process with control layer numbers, crystalline structure, orientation and crystal shapes is investigated. We are exploring the synthesis of various layered materials based on our expertise and industrial requirements.
- Synthesis of wide band gap oxide semiconductors
Beta-gallium oxide (β-Ga2O3) and magnesium zinc oxide (MgZnO) are the emerging oxide semiconductors with a wide band gap for optoelectronics and power device applications. We are exploring the growth of the oxide semiconductors by CVD technique on various substrate materials. Epitaxial CVD synthesis of bulk crystals, thin film, nanorods, and nanowires of the oxide semiconductors are challenged in these studies.
- Optoelectronics (transparent flexible devices, photovoltaics, photodetectors)
Combination of graphene, hBN with other conventional semiconductors such as Silicon and GaN are of particular interest to developing novel optoelectronic devices. We are also focusing on developing Self-powered/low power-consuming β-Ga2O3 and MgZnO based solar blind deep ultraviolet (DUV) photodetectors for various applications. Integration of 2D layered materials and wide band gap oxide semiconductors are under investigation for the development of transparent flexible optoelectronic devices.
- Power electronic devices (Schottky devices, Thin Film Transistors)
We are exploring oxide semiconductor (β-Ga2O3, MgZnO etc.) based materials as an alternative to high frequency and high current density devices in power electronics. In this prospect, we are combining graphene and hBN layers with oxide semiconductors to fabricate Schottky junction devices and thin film transistors (TFTs).