Clean-Energy Innovation Laboratory

052-735-5216 kalita.golap_AT_nitech.ac.jp

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Clean-Energy Innovation Laboratory

 2019/04/01

Mr. Mandar Shinde and Ms. Bhagyashri Todankar joined our lab as new PhD students

 2019/03/27

Congratulation to Dr. Rakesh Mahyavanshi for completing Doctoral course under Professor Golap Kalita and joined Toyoda Gosei, Japan

 2019/03/24

New paper was accepted for publication

“Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction”

Applied Physics Letters

 2018/11/16

Our published article is Most Accessed 08/2018 – Wiley-VCH

Golap Kalita, Rakesh D. Mahyavanshi, Pradeep Desai, Ajinkya K. Ranade, Masaharu Kondo, Takehisa Dewa, Masaki Tanemura

 2018/04/23

New paper was accepted for publication

“Photovoltaic Action in Graphene-Ga2O3 Heterojunction with Deep-Ultraviolet Irradiation” [Rapid Research Letter]

Phys. Status Solidi RRL 2018, vol. 12, eLoc. 1800198

 2018/09/29

Talk on ‘Graphene Based Materials’ by Dr. M. Sathish on October 5th

“Graphene/Carbon-based Nanocomposite Electrodes for Fabrication of High Energy Supercapacitors”

To be held on 2018.10.05 – Wed, 14:00-16:00, Building 11, Floor 2

Speaker: Dr. M. Sathish
Scientist, Functional Materials Division
CSIR-Central Electrochemical Research Institute (CSIR-CECRI) Karaikudi, India
India’s premium research institute and largest research establishment for Electrochemistry in South Asia

 2018/08/06

Three new papers were accepted for publication

1) “Photovoltaic action with broad band photoresponsivity in germanium-MoS2 ultrathin heterojunction” in IEEE Transactions in Electron Devices

2) “Switching isotropic and anisotropic graphene growth in a solid source CVD” in CrystEngComm

3) “Role of Doped Nitrogen in Graphene for Flow‐Induced Power Generation” in Advanced Engineering Materials

 2018/07/20

Exhibiting at Innovation Japan 2018 – University Fair in Tokyo. Co-organized by MEXT (Ministry of Economy, Trade and Industry)

InnovationJapan2018

InnovationJapan2018 (08/30-31)

 2018/06/22

A new paper is accepted for publication on “graphene-GaN” Schottky junction

”Schottky barrier diode characteristics of graphene-GaN heterojunction with hexagonal boron nitride interfacial layer”

 2018/05/30

A new paper has been published on “graphene/ Ga2O3” heterojunction based Deep-UV photodiode

Photovoltaic Action in Graphene–Ga2O3 Heterojunction with Deep‐Ultraviolet Irradiation

Attended the 65th Japan Society of Applied Physics Conference held at WASEDA University in Tokyo, Japan