Clean-Energy Innovation Laboratory


Clean-Energy Innovation Laboratory


Mr. Mandar Shinde and Ms. Bhagyashri Todankar joined our lab as new PhD students


Congratulation to Dr. Rakesh Mahyavanshi for completing Doctoral course under Professor Golap Kalita and joined Toyoda Gosei, Japan


New paper was accepted for publication

“Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction”

Applied Physics Letters


Our published article is Most Accessed 08/2018 – Wiley-VCH

Golap Kalita, Rakesh D. Mahyavanshi, Pradeep Desai, Ajinkya K. Ranade, Masaharu Kondo, Takehisa Dewa, Masaki Tanemura


New paper was accepted for publication

“Photovoltaic Action in Graphene-Ga2O3 Heterojunction with Deep-Ultraviolet Irradiation” [Rapid Research Letter]

Phys. Status Solidi RRL 2018, vol. 12, eLoc. 1800198


Talk on ‘Graphene Based Materials’ by Dr. M. Sathish on October 5th

“Graphene/Carbon-based Nanocomposite Electrodes for Fabrication of High Energy Supercapacitors”

To be held on 2018.10.05 – Wed, 14:00-16:00, Building 11, Floor 2

Speaker: Dr. M. Sathish
Scientist, Functional Materials Division
CSIR-Central Electrochemical Research Institute (CSIR-CECRI) Karaikudi, India
India’s premium research institute and largest research establishment for Electrochemistry in South Asia


Three new papers were accepted for publication

1) “Photovoltaic action with broad band photoresponsivity in germanium-MoS2 ultrathin heterojunction” in IEEE Transactions in Electron Devices

2) “Switching isotropic and anisotropic graphene growth in a solid source CVD” in CrystEngComm

3) “Role of Doped Nitrogen in Graphene for Flow‐Induced Power Generation” in Advanced Engineering Materials


Exhibiting at Innovation Japan 2018 – University Fair in Tokyo. Co-organized by MEXT (Ministry of Economy, Trade and Industry)


InnovationJapan2018 (08/30-31)


A new paper is accepted for publication on “graphene-GaN” Schottky junction

”Schottky barrier diode characteristics of graphene-GaN heterojunction with hexagonal boron nitride interfacial layer”


A new paper has been published on “graphene/ Ga2O3” heterojunction based Deep-UV photodiode

Photovoltaic Action in Graphene–Ga2O3 Heterojunction with Deep‐Ultraviolet Irradiation

Attended the 65th Japan Society of Applied Physics Conference held at WASEDA University in Tokyo, Japan